A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications

TitleA 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications
Publication TypeConference Paper
Year of Publication2011
AuthorsSiligaris A, Richard O, Martineau B, Mounet C, Chaix F, Ferragut R, Dehos C, Lanteri J, Dussopt L, Yamamoto SD, Pilard R, Busson P, Cathelin A, Belot D, Vincent P
Conference NameSolid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Date Publishedfeb.
Keywords16-QAM OFDM signals, CMOS integrated circuits, CMOS technology, ESD-protected die, frequency 60 GHz, fully integrated transceiver module, high temperature cofired ceramic substrate, OFDM modulation, quadrature amplitude modulation, radio transceivers, reception glass-substrate antennas, size 65 nm, video streaming, wireless high-definition video streaming, WirelessHD standard
Abstract

This paper presents a fully integrated 60GHz transceiver module in a 65nm CMOS technology for wireless high-definition video streaming. The CMOS chip is compatible with the WirelessHD #x2122; standard, covers the four channels and supports 16-QAM OFDM signals including the analog baseband. The ESD-protected die (9.3mm2) is flip-chipped atop a High Temperature Cofired Ceramic (HTCC) substrate, which receives also an external PA and the emission and reception glass-substrate antennas. The module occupies an area of only 13.5 #x03C7;8.5mm2. It consumes 454mW in receiver mode and 1.357W in transmitter mode (357mW for the transmitter and 1W for the PA).

DOI10.1109/ISSCC.2011.5746264